Title :
InGaAsN quantum well structures for longwavelength lasers
Author_Institution :
Corporate Res. Photonics, Infineon Technol., Munchen, Germany
Abstract :
Summary form only given. We report on the growth of this material by solid source molecular beam epitaxy (MBE) using an RF-coupled plasma source to generate reactive nitrogen from N/sub 2/. Based on optical and structural characterisation we will discuss carrier localisation, nommiformity in composition, local bonding arrangement as well as the influence of the post-growth annealing treatment commonly used for this material.
Keywords :
III-V semiconductors; annealing; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; optical fabrication; quantum well lasers; semiconductor quantum wells; InGaAsN; InGaAsN quantum well structures; N/sub 2/; QW; RF-coupled plasma source; carrier localisation; local bonding; long wavelength lasers; optical characterisation; post-growth annealing treatment; reactive nitrogen; solid source MBE; solid source molecular beam epitaxy; structural characterisation; Annealing; Composite materials; Contact resistance; Doping; Gallium arsenide; Gallium nitride; Molecular beam epitaxial growth; Optical materials; Optical resonators; Quantum well lasers;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-662-1
DOI :
10.1109/CLEO.2001.947758
