Title :
Recrystallization of Ge for III-V photovoltaic substrates
Author :
McNatt, Jeremiah ; Raffaelle, Ryne ; Pal, AnnaMaria ; Forbes, David ; Maurer, William
Author_Institution :
NASA Glenn Res. Center, Cleveland, OH, USA
Abstract :
Amorphous germanium (Ge) is RF sputtered onto 25 ¿m thick molybdenum (Mo) foils and recrystallized at 675 °C under an AsH3 environment. After annealing, the Ge is polycrystalline with grain boundary regions that range from 1 um2 to 0.5 cm2. The polycrystalline surface behaves electrically much like that of commercial single crystal Ge. This polycrystalline Ge on thin Mo foil will serve as a substrate for a high efficient, high mass-specific-power, photovoltaic device.
Keywords :
annealing; elemental semiconductors; germanium; grain boundaries; recrystallisation; semiconductor growth; sputter deposition; Ge; Mo; RF sputtering; annealing; grain boundary regions; lll-V photovoltaic substrates; photovoltaic device; polycrystalline surface; recrystallization; size 25 mum; temperature 675 degC; Annealing; Germanium; Grain boundaries; Hydrogen; III-V semiconductor materials; Photovoltaic systems; Solar power generation; Substrates; Temperature; Thermal conductivity;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location :
Philadelphia, PA
Print_ISBN :
978-1-4244-2949-3
Electronic_ISBN :
0160-8371
DOI :
10.1109/PVSC.2009.5411695
