Advanced power module using GaAs semiconductors, metal matrix composite packaging material, and low inductance design

Author

Anderson, Samuel ; Berringer, Ken ; Romero, Guillermo

Author_Institution

Semicond. Products Sector, Motorola Inc., Phoenix, AZ, USA

fYear

1994

fDate

31 May-3 Jun 1994

Firstpage

21

Lastpage

24

Abstract

Power modules for high power applications employing silicon based semiconductors are limited to low frequency operation and have some inherent reliability limitations. A 400 amp 600 volt power module has been designed using new technologies to overcome these limitations. Gallium arsenide based semiconductors provide efficient high frequency operation. Low inductance techniques are used in the package design to enable high frequency operation. Silicon carbide metal matrix composite materials are used to provide reliable packaging and thermal management of GaAs and silicon devices

Keywords

gallium arsenide; 400 A; 600 V; GaAs; GaAs semiconductors; HF operation; SiC; high frequency operation; high power applications; low inductance design; metal matrix composite packaging material; power module; thermal management; Composite materials; Frequency; Gallium arsenide; Inductance; Materials reliability; Multichip modules; Semiconductor device packaging; Semiconductor device reliability; Silicon carbide; Thermal management;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on

Conference_Location

Davos

ISSN

1063-6854

Print_ISBN

0-7803-1494-8

Type

conf

DOI

10.1109/ISPSD.1994.583629

Filename

583629