DocumentCode
3449335
Title
Rapid deposition of poly-Si thin film on glass substrates for solar application
Author
Ding, Peijun ; Song, Guanghua ; Poppe, Steve ; Fu, Jianming ; Xu, Zheng ; Chung, Ben ; Yan, Lou
Author_Institution
Sierra Solar Power, Inc., Fremont, CA, USA
fYear
2009
fDate
7-12 June 2009
Abstract
In this paper, a rapid deposition method is developed for thin film poly-Si growth on various cheap borosilicate glasses. The depositing film is smooth and its thickness can be well controlled at 50 ¿m. The film thickness is mainly determined by the pulling-speed of glass substrates. The grain size of the film varies from 30-100 ¿m. Sinton PCD measurement indicates the effective lifetime ¿ above 1.1 ¿s after SiNx coating on the front surface and forming gas annealing. The actual lifetime can be even higher because of lack of passivation on the rear surface.
Keywords
borosilicate glasses; carrier lifetime; elemental semiconductors; grain size; passivation; semiconductor thin films; silicon; solar cells; substrates; Si; Sinton PCD measurement; borosilicate glasses; carrier lifetime; glass substrates; grain size; passivation; polysilicon thin film; rapid deposition; size 30 mum to 100 mum; solar application; Glass; Sputtering; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location
Philadelphia, PA
ISSN
0160-8371
Print_ISBN
978-1-4244-2949-3
Electronic_ISBN
0160-8371
Type
conf
DOI
10.1109/PVSC.2009.5411727
Filename
5411727
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