DocumentCode
3449386
Title
A reverse-channel, high-voltage lateral IGBT
Author
Chow, T. Paul ; Pattanayak, Deva N. ; Baliga, B.Jayant ; Adler, Michael S.
Author_Institution
Rensselaer Polytech. Inst., Troy, NY, USA
fYear
1994
fDate
31 May-3 Jun 1994
Firstpage
57
Lastpage
61
Abstract
A novel reverse-channel lateral IGBT has been studied with numerical simulations and demonstrated experimentally for the first time. It exhibits a negative differential resistance (NDR) region, which is dependent on the gate voltage and has large peak to valley ratios (10 to >1000), in the I-V characteristics. Also, during dynamic switching, it has been shown to be self-current limiting and hence not to latch up
Keywords
insulated gate bipolar transistors; HV lateral IGBT; I-V characteristics; NDR region; dynamic switching; gate voltage; high-voltage IGBT; negative differential resistance; reverse-channel device; self-current limiting; Conductivity; Electric resistance; FETs; Insulated gate bipolar transistors; Insulation; Latches; Numerical simulation; Region 2; Research and development; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on
Conference_Location
Davos
ISSN
1063-6854
Print_ISBN
0-7803-1494-8
Type
conf
DOI
10.1109/ISPSD.1994.583647
Filename
583647
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