DocumentCode
3449405
Title
The fast turn off advanced IGBT, a new device concept
Author
Yee, H.P. ; Lauritzen, P.O. ; Darling, Robert B. ; Wakatabe, M. ; Sugai, A. ; Horiguchi, K.
Author_Institution
Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA
fYear
1994
fDate
31 May-3 Jun 1994
Firstpage
63
Lastpage
67
Abstract
A new lateral Advanced IGBT (A-IGBT) that includes an additional P-MOSFET for faster turn-off is presented. The added P-MOSFET removes injected minority carriers in the base of A-IGBT during turn-off, achieving faster turn-off times without increasing IGBT on-state voltages. Device simulations indicate an A-IGBT has a factor of 10 improvement in turn-off time over the standard IGBT
Keywords
insulated gate bipolar transistors; P-MOSFET; device simulations; fast turnoff; injected minority carriers removal; lateral IGBT; Anodes; Bipolar transistors; Breakdown voltage; Cathodes; Impedance; Insulated gate bipolar transistors; MOSFET circuits; Power MOSFET; Power integrated circuits; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on
Conference_Location
Davos
ISSN
1063-6854
Print_ISBN
0-7803-1494-8
Type
conf
DOI
10.1109/ISPSD.1994.583648
Filename
583648
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