• DocumentCode
    3449459
  • Title

    Transport properties of Zn doped CuInSe2 single crystals

  • Author

    Tezlevan, V. ; Radautsan, S.

  • fYear
    1995
  • fDate
    11-14 Oct 1995
  • Firstpage
    107
  • Lastpage
    110
  • Abstract
    The results of the transport phenomena measurements on n-CuInSe 2 are presented. For the first time the transverse Nernst-Ettingshausen (N-E) effect is investigated in the I-III-VI2 materials. From the results of thermoelectric power, the Hall coefficient and transverse N-E effect measurements values of the density of states effective mass m* at the temperature range investigated have been calculated
  • Keywords
    Hall effect; copper compounds; effective mass; electronic density of states; impurity states; indium compounds; ternary semiconductors; thermoelectric power; thermomagnetic effects; zinc; CuInSe2:Zn; Hall coefficient; acceptors; density of states; donors; effective mass; n-CuInSe2:Zn; photovoltaic devices; thermoelectric power; transverse Nernst-Ettingshausen effect; Conducting materials; Crystals; Hall effect; Magnetic field measurement; Optical materials; Semiconductor materials; Temperature dependence; Temperature distribution; Thermoelectricity; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-2647-4
  • Type

    conf

  • DOI
    10.1109/SMICND.1995.494875
  • Filename
    494875
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3449459