Computer simulation and design optimization of IGBT´s in soft-switching converters

Author

Widjaja, I. ; Kurnia, A. ; Divan, D. ; Shenai, K.

Author_Institution

Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA

fYear

1994

fDate

31 May-3 Jun 1994

Firstpage

105

Lastpage

109

Abstract

The next generation of power semiconductor devices will be designed and optimized to meet the specific application requirements. Resonant dc link concept is gaining wide popularity in a range of soft-switching applications because of superior power conversion efficiency and improved overall system reliability. Mixed-mode simulations are used to study the carrier dynamics in non punchthrough IGBT structures during turn-off under soft- and hard-switching conditions. The simulation results are shown to qualitatively predict the measured bump in the tail current with varying output dv/dt conditions

Keywords

insulated gate bipolar transistors; IGBTs; design optimization; hard-switching conditions; nonpunchthrough structures; output dv/dt conditions; power conversion efficiency; power semiconductor devices; resonant dc link concept; soft-switching converters; system reliability; tail current; Application software; Computer simulation; Current measurement; Design optimization; Insulated gate bipolar transistors; Power conversion; Power semiconductor devices; Predictive models; Reliability; Resonance;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on

Conference_Location

Davos

ISSN

1063-6854

Print_ISBN

0-7803-1494-8

Type

conf

DOI

10.1109/ISPSD.1994.583664

Filename

583664