Title :
LPCVD SiO2 layers prepared from SiH4 and O 2 at 450°C in a RTP
Author :
Cobianu, Cornel ; Rem, Jan Bart ; Klootwijk, Johan H. ; Weusthof, Marcel H H ; Holleman, Jisk ; Woerlee, Pierre H.
Author_Institution :
Inst. of Microtechnol., Bucharest, Romania
Abstract :
In this paper experimental results of the silane oxidation kinetics in a rapid thermal low pressure chemical vapor deposition (RTLPCVD) cold wall reactor at 450°C are presented. The kinetics of SiO2 film preparation is mainly controlled by a threshold partial pressure of silane which determines a sharp transition from no film formation to a high deposition rate
Keywords :
chemical vapour deposition; insulating thin films; oxidation; rapid thermal processing; silicon compounds; 450 C; LPCVD; RTP; SiH4; SiO2; SiO2 films; cold wall reactor; deposition rate; partial pressure; rapid thermal low pressure chemical vapor deposition; silane oxidation kinetics; Annealing; Chemical vapor deposition; Electrons; Gases; Heating; Inductors; Kinetic theory; Nitrogen; Oxidation; Thermal loading;
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
DOI :
10.1109/SMICND.1995.494925
