Title :
A study on the variation of carrier lifetime with temperature in bipolar silicon devices and its influence on device operation
Author :
Gerstenmaief, Y.C.
Author_Institution :
Corp. Res. & Dev., Siemens AG, Munich
fDate :
31 May-3 Jun 1994
Abstract :
This paper presents a study on the variation of carrier lifetime with temperature, mainly in GTO-thyristors, and its consequences on measured and simulated device behaviour (gate trigger current). A theoretical analysis is given in order to explain the results qualitatively. From the observed temperature dependence of the gate trigger current the appropriate τ(T)-law is inferred. In the region of 25°C to 125°C a strictly linear increase of τ is found
Keywords :
carrier lifetime; τ(T)-law; 25 to 125 degC; GTO-thyristors; Si; Si bipolar devices; carrier lifetime; device operation; gate trigger current; simulated device behaviour; strictly linear increase; temperature dependence; Charge carrier lifetime; Current measurement; Gold; Radiative recombination; Semiconductor process modeling; Silicon devices; Spontaneous emission; Temperature dependence; Temperature distribution; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on
Conference_Location :
Davos
Print_ISBN :
0-7803-1494-8
DOI :
10.1109/ISPSD.1994.583738
