Title :
Influence of the mechanical conditions on the electrical and structural properties of the interface between directly bonded silicon wafers
Author :
Laporte, A. ; Sarrabayrouse, G. ; Lescouzères, L. ; PeyreLavigne, A. ; Benamara, M. ; Rocher, A. ; Claverie, A.
fDate :
31 May-3 Jun 1994
Abstract :
We have studied the influence of the flatness and the relative misorientation of two contacting wafers on the Spreading Resistance profiles obtained in the interfacial region after direct bonding. Both parameters are shown to have a significant influence on the electrical properties of the structure. Plan-view Transmission Electron Microscopy examination of the interfaces suggests that this influence may take its origin from dislocation-related electrically active defects
Keywords :
silicon; Si; contacting wafers; directly bonded silicon wafers; dislocation-related electrically active defects; electrical properties; flatness; interface; mechanical conditions; misorientation; plan-view transmission electron microscopy; spreading resistance profiles; structural properties; Contacts; Electric resistance; Electrical resistance measurement; Interface states; Mechanical factors; Silicon; Strontium; Tensile stress; Transmission electron microscopy; Wafer bonding;
Conference_Titel :
Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on
Conference_Location :
Davos
Print_ISBN :
0-7803-1494-8
DOI :
10.1109/ISPSD.1994.583746
