Title :
Highly selective carrier injection in V-groove quantum wire light-emitting diodes
Author :
Weman, H. ; Martinet, E. ; Rudra, A. ; Kapon, K.
Author_Institution :
Dept. of Phys., Swiss Fed. Inst. of Technol., Lausanne, Switzerland
fDate :
Aug. 30 1999-Sept. 3 1999
Abstract :
We report on the observation of highly efficient carrier injection into GaAs/AlGaAs V-groove QWR light-emitting diodes (LEDs) containing self-ordered vertical quantum wells (VQWs), resulting in narrow linewidth (10 meV) electroluminescence (EL) from one-dimensional (1D) excitons at room temperature. The GaAs/AlGaAs QWRs were grown by low pressure organometallic chemical vapor deposition on GaAs substrates patterned with 0.5 /spl mu/m pitch V-grooves.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; electroluminescence; excitons; gallium arsenide; light emitting diodes; semiconductor quantum wires; spectral line breadth; 0.5 mum; GaAs; GaAs substrates; GaAs-AlGaAs; GaAs/AlGaAs QWR; LED; V-groove quantum wire light-emitting diodes; highly efficient carrier injection; highly selective carrier injection; low pressure organometallic chemical vapor deposition; narrow linewidth electroluminescence; one-dimensional excitons; room temperature; self-ordered vertical quantum wells; Charge carrier processes; Excitons; Gallium arsenide; Light emitting diodes; P-i-n diodes; Physics; Quantum dots; Temperature; Voltage; Wire;
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on
Conference_Location :
Seoul, South Korea
Print_ISBN :
0-7803-5661-6
DOI :
10.1109/CLEOPR.1999.814682
