Current Transport in Nanoelectronic Semiconductor Devices

An overview of models used for the simulation of current transport in nanoelectronic devices within the framework of TCAD applications is presented. Modern enhancements of semiclassical transport models based on microscopic theories as well as quantum mechanical methods used to describe coherent and dissipative quantum transport are specifically addressed. This comprises the incorporation of quantum correction and tunneling models up to dedicated quantum-mechanical simulators, and mixed approaches which are capable to account for both, quantum interference and scattering. Specific TCAD requirements are discussed from an engineer’s perspective and an outlook on future research directions is given.