Title :
A new IGBT fault protection circuit using double threshold detection and shaped VGE profile with multi-slopes
Author :
Yang, Cui ; Zheng-Nan, Zhang ; Shan-Qi, Zhao ; Zheng-Yuan, Wang ; Ting, Ma
Author_Institution :
Beijing Power Electron. R&D Center, Beijing Power Electron. Technol. Lab., China
Abstract :
A new method of IGBT fault protection using double threshold detection and shaped vGE profile of IGBT turn-off with multi-slopes is proposed, based on the analysis of the behavior of IGBTs under different short circuit conditions. Employing the new concept, a computer simulation is used to optimize the selection of threshold reference and VGE profile of turn-off. The recommended scheme is implemented to verify that the IGBT fault protection is reliable and immune from interruption in a SPWM motor drive application
Keywords :
insulated gate bipolar transistors; overcurrent protection; power bipolar transistors; semiconductor device models; short-circuit currents; IGBT fault protection circuit; IGBT turn-off; SPWM motor drive application; VGE profile; computer simulation; double threshold detection; interruption prevention; shaped VGE profile; short circuit conditions; threshold reference selection; Circuit faults; Diodes; Electrical fault detection; Fault currents; Fault detection; Insulated gate bipolar transistors; Power electronics; Protection; Switches; Voltage;
Conference_Titel :
Power Electronics and Drive Systems, 1999. PEDS '99. Proceedings of the IEEE 1999 International Conference on
Print_ISBN :
0-7803-5769-8
DOI :
10.1109/PEDS.1999.794571
