Title :
Wideband squeezing in photon-number fluctuations from a high-speed light-emitting diode
Author :
Abe, J. ; Kuga, T. ; Hirano, T. ; Yamanishi, M.
Author_Institution :
Inst. of Phys., Tokyo Univ., Japan
fDate :
Aug. 30 1999-Sept. 3 1999
Abstract :
The generation of photon-number squeezed states or sub-Poissonian light using semiconductor devices is especially attractive because of its simple experimental configuration, small energy consumption, and the possibility of large amplitude noise reduction by using high quantum efficiency devices. Recently, 3 dB squeezing at liquid nitrogen temperature and 80 MHz (3 dB roll-off bandwidth) squeezing at room temperature were reported by using a light-emitting diode. In this paper, we demonstrate over 200 MHz squeezing at 48 K.
Keywords :
light emitting diodes; optical squeezing; 200 MHz; 48 K; Fano factor; PIN photodiode; high-speed LED; large amplitude noise reduction; photon-number fluctuations; photon-number squeezed states; shot noise; sub-Poissonian light; wideband squeezing; Bandwidth; Fluctuations; Light emitting diodes; Noise level; Photonics; Physics; Semiconductor device noise; Temperature dependence; Voltage; Wideband;
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on
Conference_Location :
Seoul, South Korea
Print_ISBN :
0-7803-5661-6
DOI :
10.1109/CLEOPR.1999.814702