A new edge structure for 2 KVolt power IC operation

Author

Zambrano, R. ; Cacciola, G. ; Leonardi, S.

Author_Institution

Res. Center, SGS-Thomson Microelectron., Catania, Italy

fYear

1994

fDate

31 May-3 Jun 1994

Firstpage

373

Lastpage

378

Abstract

A new edge structure for 2 KVolt Power IC operation is introduced which features low concentration rings defined on two epilayers to increase the final junction depth. Computer simulations performed to assess the structure viability have been followed by experiments varying the implant dose. Breakdown voltages up to 2000 and 1200 Volts have been measured on UHV and VHV wafers for a wide range of implanted doses demonstrating good process latitude. Production devices featuring the new structure have been fabricated, preliminary results on an off-line SMPS are presented

Keywords

power integrated circuits; 2 kV; BiCMOS technology; UHV wafers; VHV wafers; breakdown voltages; computer simulations; edge structure; epilayers; implant dose; junction depth; low concentration rings; off-line SMPS; power IC operation; process latitude; production device fabrication; Bridge circuits; Computer simulation; Displays; Implants; Isolation technology; Microelectronics; Power integrated circuits; Production; Switched-mode power supply; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on

Conference_Location

Davos

ISSN

1063-6854

Print_ISBN

0-7803-1494-8

Type

conf

DOI

10.1109/ISPSD.1994.583789

Filename

583789