Title :
A trench-gate LIGBT structure and two LMCT structures in SOI substrates
Author :
Disney, D.R. ; Pein, H.B. ; Plummer, J.D.
Author_Institution :
Delco Electron. Corp., Kokomo, IN, USA
fDate :
31 May-3 Jun 1994
Abstract :
This paper describes a novel SOI trench-gate Lateral Insulated-Gate Bipolar Transistor (LIGBT) structure which exhibits 2.5 times higher latching current densities than an equivalent, conventional LIGBT. This improvement is achieved by allowing most of the hole current to reach the cathode contact without flowing under the N+ source region. In addition, two Lateral MOS-Controlled Thyristor (LMCT) structures in Silicon-on-Insulator (SOI) substrates are presented. These devices achieve on-state performance which is far superior to that of equivalent LIGBT devices, and switching speeds which are nearly equivalent to the LIGBT. The two LMCT configurations are compared in terms of their Maximum Controllable Current (MCC), which exceeds 100 A/cm2 for some configurations
Keywords :
insulated gate bipolar transistors; SOI substrates; Si; insulated-gate bipolar transistor; latching current densities; lateral IGBT; lateral MOS-controlled thyristor; maximum controllable current; switching speeds; trench-gate LIGBT structure; Anodes; Cathodes; Charge carrier processes; Conductivity; Current density; Dielectric substrates; Dielectrics and electrical insulation; Insulated gate bipolar transistors; Silicon on insulator technology; Thyristors;
Conference_Titel :
Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on
Conference_Location :
Davos
Print_ISBN :
0-7803-1494-8
DOI :
10.1109/ISPSD.1994.583808
