Title :
InAsP/InAlGaAs lasers for high T/sub 0/ operation
Author :
Anan, T. ; Yamada, M. ; Tokutome, K. ; Sugou, S.
Author_Institution :
Optoelectron. & High Frequency Device Res. Labs., NEC Corp., Ibaraki, Japan
fDate :
Aug. 30 1999-Sept. 3 1999
Abstract :
Low-cost long-wavelength lasers operating at high temperatures without cooling systems are required for optical subscriber systems. A quantum-well active layer with a large conduction discontinuity is thought to be effective for improving high-temperature characteristics of long-wavelength lasers. In this paper, we report on gas-source MBE growth conditions, and the fabrication process and lasing properties of these newly developed InAsP/InAlGaAs laser diodes with high-temperature characteristics.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; molecular beam epitaxial growth; quantum well lasers; semiconductor epitaxial layers; semiconductor lasers; InAsP-InAlGaAs; InAsP/InAlGaAs lasers; gas-source MBE growth conditions; high T/sub 0/ operation; high-temperature characteristics; large conduction discontinuity; laser diodes; long-wavelength lasers; low-cost long-wavelength lasers; optical subscriber systems; quantum-well active layer; semiconductor; Degradation; Electrons; Indium phosphide; Optical materials; Optical waveguides; Quantum well devices; Quantum well lasers; Temperature; Threshold current; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on
Conference_Location :
Seoul, South Korea
Print_ISBN :
0-7803-5661-6
DOI :
10.1109/CLEOPR.1999.814743
