Title :
The crucial role of doping for high repetition rate monolithic modelocking of multiple quantum well GaAs/AIGaAs lasers
Author :
McDougall, S.D. ; Vogele, B. ; Stanley, C.R. ; Ironside, C.N.
Author_Institution :
Department of Electronics and Electrical Engineering, University of Glasgow
Keywords :
Absorption; Doping; Epitaxial growth; Epitaxial layers; Excitons; Laser modes; Quantum well lasers; Semiconductor device modeling; Semiconductor lasers; Semiconductor process modeling;
Conference_Titel :
Lasers and Electro-Optics, 1997. CLEO '97., Summaries of Papers Presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4125-2
DOI :
10.1109/CLEO.1997.603045
