DocumentCode
3452832
Title
Design of double diffused structure power ICs
Author
Sanqing, Liu ; Guangjun, Cao ; Jianhua, Ying ; Yanzhong, Xu ; Zuxin, Qin
Author_Institution
Dept. of Solid State Electron., Huazhong Univ. of Sci. & Technol., Wuhan, China
fYear
1995
fDate
11-14 Oct 1995
Firstpage
363
Lastpage
366
Abstract
Butt Joint Lateral Diffusion (BJLD) NMOS unit structure derived from conventional VDMOS structure is described. With compatible design of both NMOS and VDMOS, a new power IC consists of a HV VDMOS output device and LV functional circuit units is proposed. Layout design of such a power IC is discussed
Keywords
MOS integrated circuits; electric breakdown; integrated circuit layout; power integrated circuits; HV VDMOS output device; LV functional circuit units; NMOS unit structure; butt joint lateral diffusion structure; double diffused structure; layout design; power ICs; Doping; Electrodes; Epitaxial layers; Logic devices; MOS devices; Manufacturing; Power engineering and energy; Power integrated circuits; Solid state circuits; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location
Sinaia
Print_ISBN
0-7803-2647-4
Type
conf
DOI
10.1109/SMICND.1995.495037
Filename
495037
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