Title :
Very high aspect ratio through silicon vias (TSVs) using wire bonding
Author :
Schroder, Stephan ; Fischer, Andreas C. ; Stemme, Goran ; Niklaus, Frank
Author_Institution :
KTH R. Inst. of Technol., Stockholm, Sweden
Abstract :
This paper reports a fabrication approach for very high aspect ratio through silicon vias (TSVs). The metal filling of the through via holes is implemented by adapting standard wire bonding technology. TSVs with a diameter of 30 μm and aspect ratios between 10:1 and 20:1 have been fabricated. Basic electrical characterization and optical inspection have been conducted to verify the resistance and integrity of the metal and insulator filling of the TSV.
Keywords :
integrated circuit interconnections; integrated circuit metallisation; lead bonding; three-dimensional integrated circuits; electrical characterization; metal filling; optical inspection; size 30 mum; through silicon vias; wire bonding; Bonding; Filling; Metals; Silicon; Substrates; Through-silicon vias; Wires; Metal through silicon vias; TSVs; high aspect ratio; wire bonding;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII), 2013 Transducers & Eurosensors XXVII: The 17th International Conference on
Conference_Location :
Barcelona
DOI :
10.1109/Transducers.2013.6626728
