Title :
Buried-channel In0.70Ga0.30As/In0.52Al0.48As MOS capacitors and transistors with HfO2 gate dielectrics
Author :
Sun, Yanning ; Koester, S.J. ; Kiewra, E.W. ; Fogel, K.E. ; Sadana, D.K. ; Webb, D.J. ; Fompeyrine, J. ; Locquet, J.-P. ; Sousa, M. ; Germann, R.
Author_Institution :
IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598, USA. phone: (914)945-3083, fax: (914)945-2141, email: yansun@us.ibm.com
Keywords :
Dielectrics; HEMTs; Hafnium oxide; Indium gallium arsenide; Indium phosphide; MODFETs; MOS capacitors; MOSFETs; Substrates; Very large scale integration;
Conference_Titel :
Device Research Conference, 2006 64th
Conference_Location :
State College, PA, USA
Print_ISBN :
0-7803-9748-7
DOI :
10.1109/DRC.2006.305114
