• DocumentCode
    3452947
  • Title

    Measuring and Modeling the Scaling Trend of the RF Noise in MOSFETs

  • Author

    Kao, H.L. ; Chin, Alvin ; Liao, C.C. ; McAlister, S.P. ; Kwo, J. ; Hong, M.

  • Author_Institution
    Nano Science Tech. Center, Dept. of Electronics Eng., Nat´´l Chiao-T. Univ., Univ. System of Taiwan, Hsinchu, Taiwan ROC
  • fYear
    2006
  • fDate
    26-28 June 2006
  • Firstpage
    65
  • Lastpage
    66
  • Abstract
    Using a microstrip line layout, a low minimum noise figure (NFmin) of 0.46 dB at 10 GHz, along with a 16.6 dB associated gain has been measured directly for an 8-finger 90nm node MOSFET (LG = 65nm). A self-consistent DC, ft and NFmin device model was developed, which allows prediction of the down-scaling trend of RF MOSFETs into deep nm scale.
  • Keywords
    Coplanar waveguides; Equations; Fingers; Gain; MOSFETs; Microstrip; Noise measurement; Predictive models; Radio frequency; Roentgenium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2006 64th
  • Conference_Location
    State College, PA, USA
  • ISSN
    1548-3770
  • Print_ISBN
    0-7803-9748-7
  • Type

    conf

  • DOI
    10.1109/DRC.2006.305120
  • Filename
    4097537
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3452947