DocumentCode
3453011
Title
Size-quantized effect in Bi-Sn wires under tensile strain
Author
Gitsu, D.V. ; Kondrya, E.P. ; Nikolaeva, A.A.
Author_Institution
Inst. of Appl. Phys., Acad. of Sci., Kishinev, Moldova
fYear
1995
fDate
11-14 Oct 1995
Firstpage
411
Lastpage
414
Abstract
An oscillating dependence of the resistance of thin (d<2 μm) cylindrical Bi-0.03 at.% Sn single crystals at 4.2 K on the tensile strain is observed, the dependence being determined by the sample diameter, temperature and impurity concentration. An analysis of the nonmonotonic behaviour of the resistance of thin samples is based an the idea of size-quantized spectrum of charge carriers and a noticeable variation of the exchange carrier concentration induced by impurities under a tensile strain
Keywords
bismuth alloys; carrier density; deformation; piezoresistance; size effect; tin alloys; 4.2 K; Bi-Sn; Bi-Sn wires; charge carrier spectrum; cylindrical single crystals; exchange carrier concentration; impurities; resistance oscillations; size-quantized effect; tensile strain; Anisotropic magnetoresistance; Bismuth; Charge carriers; Coatings; Glass; Impurities; Lattices; Superconducting coils; Tensile strain; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location
Sinaia
Print_ISBN
0-7803-2647-4
Type
conf
DOI
10.1109/SMICND.1995.495048
Filename
495048
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