Title :
The Impact of Strained Engineering for 65nm FUSI CMOSFETs
Author :
Lai, Chieh-Ming ; Fang, Yean-Kuen ; Yeh, Wen-Kuan ; Lin, Chien-Ting
Author_Institution :
Institute of Microelectronics, National Cheng Kung University, No. 1 University Road, Tainan, TAIWAN, 70101, Tel: 886-6-2080398, FAX: +886-6-2345482
Keywords :
Boron; CMOSFETs; Capacitance; Capacitance-voltage characteristics; Gate leakage; Low-frequency noise; MOSFETs; Microelectronics; Tensile stress; Threshold voltage;
Conference_Titel :
Device Research Conference, 2006 64th
Conference_Location :
State College, PA, USA
Print_ISBN :
0-7803-9748-7
DOI :
10.1109/DRC.2006.305123