Title :
Complete Quasi-Static Modeling of 130nm RF MOSFETs
Author :
Jung, Young Ho ; Kang, In Man ; Shin, Hyungcheol
Author_Institution :
School of Electrical Engineering, Seoul National University, San 56-1, Shinlim-dong, Kwanak-gu, Seoul 151-742, Korea
Abstract :
A complete quasi-static modeling of RF MOSFETs including extrinsic parameters is proposed. All the parameters were obtained by linear regression and analytical equations without complex curve fitting. The extracted results were verified by using the parameters for MOSFET small signal model. Without any fitting or optimization step, the total modeling error of S-parameter was calculated to be only 1.46% up to 20 GHz.
Keywords :
Abstracts; Capacitance; Data mining; Electrical resistance measurement; Electron mobility; Equivalent circuits; MOSFET circuits; Radio frequency; Scattering parameters; Semiconductor device modeling;
Conference_Titel :
Device Research Conference, 2006 64th
Conference_Location :
State College, PA, USA
Print_ISBN :
0-7803-9748-7
DOI :
10.1109/DRC.2006.305124
