DocumentCode :
3453585
Title :
Semiconducting transition metal silicide films-preparation, properties and possible applications
Author :
Lange, H.
Author_Institution :
Hahn-Meitner-Inst., Berlin, Germany
fYear :
1995
fDate :
11-14 Oct 1995
Firstpage :
531
Lastpage :
540
Abstract :
A short review is given on the basic properties of semiconducting transition metal silicides and on the methods of their preparation. Special emphasis is put on the electronic and optical properties. Most of the data reported refer to β-FeSi2. Possible applications of the semiconducting silicides are outlined
Keywords :
electrical conductivity; epitaxial growth; optical properties; optoelectronic devices; reviews; semiconductor thin films; sputter deposition; thermoelectric devices; transition metal compounds; vacuum deposition; β-FeSi2; CrSi2; FeSi2; Ir2Si3; MnSi1.73; Os2Si3; OsSi; OsSi2; ReSi2; Ru2Si3; electronic properties; optical properties; preparation; semiconducting transition metal silicides; silicide films; Circuits; Contact resistance; Lattices; Optical films; Optical refraction; Semiconductivity; Semiconductor films; Silicides; Thermal resistance; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
Type :
conf
DOI :
10.1109/SMICND.1995.495075
Filename :
495075
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3453585
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