Title :
30-nm-gate AlGaN/GaN MIS-HFETs with 180 GHz fT
Author :
Higashiwaki, Masataka ; Matsui, Toshiaki ; Mimura, Takashi
Author_Institution :
National Institute of Information and Communications Technology, Koganei, Tokyo 184-8795, Japan. Phone: +81-42-327-6092, Fax: +81-42-327-6669, E-mail: mhigashi@nict.go.jp
Keywords :
Aluminum gallium nitride; Frequency; Gallium nitride; Gold; HEMTs; Leakage current; Lithography; MODFETs; Passivation; Silicon compounds;
Conference_Titel :
Device Research Conference, 2006 64th
Conference_Location :
State College, PA, USA
Print_ISBN :
0-7803-9748-7
DOI :
10.1109/DRC.2006.305161
