DocumentCode :
3453935
Title :
High-Breakdown Voltage AlGaN/GaN HEMTs using trench gates
Author :
Dora, Y. ; Chakraborty, A. ; McCarthy, L. ; Keller, S. ; DenBaars, S.P. ; Mishra, U.K.
Author_Institution :
Electrical and Computer Engineering Dept, Univ. of California, Santa Barbara, CA93106. yuvaraj@umail.ucsb.edu, (805)893 3812
fYear :
2006
fDate :
26-28 June 2006
Firstpage :
161
Lastpage :
162
Keywords :
Aluminum gallium nitride; Atomic force microscopy; Etching; Gallium nitride; HEMTs; MODFETs; Metallization; Passivation; Scanning electron microscopy; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2006 64th
Conference_Location :
State College, PA, USA
ISSN :
1548-3770
Print_ISBN :
0-7803-9748-7
Type :
conf
DOI :
10.1109/DRC.2006.305166
Filename :
4097583
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3453935
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