DocumentCode
3454083
Title
Fabrication and evaluation of floating gate memories with surface-nitrided Si nanocrystals
Author
Naito, Shinya ; Ueyama, Tomonori ; Kondo, Hiroki ; Sakashita, Mitsuo ; Sakai, Akira ; Ogawa, Masaki ; Zaima, Shigeaki
fYear
2004
fDate
Oct. 27-29, 2004
Firstpage
170
Lastpage
171
Keywords
Capacitance-voltage characteristics; Fabrication; Grain size; MOS capacitors; Nanocrystals; Nitrogen; Nonvolatile memory; Oxidation; Surface treatment; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2004. Digest of Papers. 2004 International
Print_ISBN
4-99024720-5
Type
conf
DOI
10.1109/IMNC.2004.245778
Filename
1459528
Link To Document