DocumentCode
3454161
Title
Control of inas quantum dot emission wavelengths in narrow regions by selective formation of GaInAs covered layers grown with in-situ mask
Author
Ohkouchi, S. ; Y Nakamura ; Nakamura, H. ; Asakawa, K.
fYear
2004
fDate
Oct. 27-29, 2004
Firstpage
176
Lastpage
177
Keywords
Gallium arsenide; Molecular beam epitaxial growth; Nonlinear optical devices; Nonlinear optics; Optical switches; Photoluminescence; Quantum dots; US Department of Transportation; Ultrafast optics; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2004. Digest of Papers. 2004 International
Print_ISBN
4-99024720-5
Type
conf
DOI
10.1109/IMNC.2004.245781
Filename
1459531
Link To Document