DocumentCode
3454565
Title
Process and device modelling of mm-wave HEMTs
Author
Morton, C.G.
Author_Institution
Microwave & Terahertz Technol. Group, Leeds Univ., UK
fYear
1995
fDate
35037
Firstpage
42370
Lastpage
42375
Abstract
The application of one and quasi-two dimensional numerical models to the analysis of HEMT processing and design is considered in this paper. The usefulness of these models is demonstrated for interpreting the ambiguities which occur when considering the typical measurements which are performed at the different stages of HEMT fabrication. In particular, some of the more subtle questions of HEMT design are addressed to illustrate the power of the quasi-two dimensional modelling approach
Keywords
Hall mobility; high electron mobility transistors; millimetre wave field effect transistors; semiconductor device models; semiconductor process modelling; two-dimensional electron gas; 2DEG density; C-V response simulation; GaAs; HEMT design; HEMT processing; Hall profile; device modelling; mm-wave HEMTs; one dimensional numerical models; process modelling; quasi-two dimensional numerical models;
fLanguage
English
Publisher
iet
Conference_Titel
Terahertz Technology, IEE Colloquium on
Conference_Location
London
Type
conf
DOI
10.1049/ic:19951483
Filename
495119
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