• DocumentCode
    3454807
  • Title

    100 GHz SOI gap waveguides

  • Author

    Rahiminejad, S. ; Brazalez, A. Algaba ; Raza, Haider ; Pucci, Elena ; Haasl, S. ; Kildal, Per-Simon ; Enoksson, P.

  • Author_Institution
    Chalmers Univ. of Technol., Gothenburg, Sweden
  • fYear
    2013
  • fDate
    16-20 June 2013
  • Firstpage
    510
  • Lastpage
    513
  • Abstract
    Two gap waveguide technologies, groove and ridge, are presented here for F-band applications. Three different groove gap waveguide devices and four different ridge gap waveguide devices have been fabricated. All of them were micromachined to achieve the feature size required for the frequency band and fabricated in a single process using SOI wafers. The two types provide a more robust coupling to standard waveguides and high frequency probes. Measurements for most of the devices are shown in this paper, showing robust measurements and good agreement with simulations. More measurements need to be done but the initial ones show the promise both in the manufacturing technique and the coupling.
  • Keywords
    ridge waveguides; silicon-on-insulator; F-band application; SOI wafer; frequency 100 GHz; frequency band; gap waveguide technology; groove gap waveguide device; ridge gap waveguide device; robust coupling; Couplings; Loss measurement; Microstrip; Nails; Pins; Waveguide transitions; Bed of nails; Gap Waveguide; Groove; High-frequency; Micromachining; Ridge; Waveguide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII), 2013 Transducers & Eurosensors XXVII: The 17th International Conference on
  • Conference_Location
    Barcelona
  • Type

    conf

  • DOI
    10.1109/Transducers.2013.6626815
  • Filename
    6626815