Material gain comparison for InGaAsP, AlGaInAs and InGaAsN for 1.3 micron laser diode

Summary form only given. Recently, AlGaInAs and InGaAsN have received much interest as materials for 1.3 micron laser applications in competition with traditional InGaAsP. Both AlGaInAs and InGaAsN have the advantage of large conduction band offsets leading to superior electron confinement. We compare the gain and transparency carrier density at two temperatures to determine best the modulation response as well as the lowest possible threshold carrier density for uncooled laser applications. It is predicted that AlGaInAs has the highest peak differential gain for both room temperature and high temperature operation hence showing much potential for high speed response. AlGaInAs also has the lowest predicted transparency carrier density that may lead to low threshold currents, further enhancing its promise for 1.3 micron laser diode applications.