DocumentCode
3455508
Title
On the dispersive behaviour of AlN/Si High Overtone Bulk Acoustic Resonators
Author
Masson, J. ; Martin, G. ; Boudot, R. ; Gruson, Y. ; Ballandras, S. ; Artieda, A. ; Muralt, P. ; Belgacem, B. ; Chomeloux, L.
Author_Institution
FEMTO-ST, Besancon
fYear
2007
fDate
May 29 2007-June 1 2007
Firstpage
741
Lastpage
744
Abstract
Harmonic bulk acoustic resonators are build on a SOI to allow for a good spectral separation of the device resonance. SOI is etched back to allow for the fabrication of well defined resonance in the vicinity of 2.45 GHz. Thermal sensitivity close to -25 ppm/K also was measured. The analysis of experimental data obtained for resonance taking place in the whole stack allows for emphasizing a dispersive behavior of the harmonic modes of the structure.
Keywords
acoustic resonators; aluminium compounds; bulk acoustic wave devices; etching; sensitivity; silicon; silicon-on-insulator; AlN-Si; SOI fabrication; dispersive behaviour; etching; harmonic overtone bulk acoustic resonators; spectral separation; thermal sensitivity; Aluminum; Dispersion; Electrodes; Fabrication; Oscillators; Q factor; Resonance; Resonant frequency; Silicon; Sputtering;
fLanguage
English
Publisher
ieee
Conference_Titel
Frequency Control Symposium, 2007 Joint with the 21st European Frequency and Time Forum. IEEE International
Conference_Location
Geneva
ISSN
1075-6787
Print_ISBN
978-1-4244-0646-3
Electronic_ISBN
1075-6787
Type
conf
DOI
10.1109/FREQ.2007.4319174
Filename
4319174
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