Etching characteristics of TaN/HfO₂ structure in Cl₂/Ar and SF₆/Cl₂/Ar inductively coupled plasma

Author

Shin, M.H. ; Na, S.W. ; Lee, N.-E. ; Kim, J.Y.

fYear

2004

fDate

Oct. 27-29, 2004

Firstpage

278

Lastpage

279

Keywords

Argon; Coils; Control systems; Electrodes; Etching; Hafnium oxide; Plasma applications; Plasma chemistry; Plasma properties; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2004. Digest of Papers. 2004 International

Print_ISBN

4-99024720-5

Type

DOI

10.1109/IMNC.2004.245650

Filename

1459584

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