• DocumentCode
    3455709
  • Title

    Electron cyclotron resonance-reactive CH4/H2/Ar with constant Ar flow for high etch rate and improvement of etched surface morphology

  • Author

    Awa, Y. ; Ide, T. ; Arakawa, T. ; Haneji, N. ; Tada, K. ; Sugiyama, M. ; Shimizu, H. ; Shirnogaki, Y. ; Nakano, Y.

  • fYear
    2004
  • fDate
    Oct. 27-29, 2004
  • Firstpage
    280
  • Lastpage
    281
  • Keywords
    Argon; Cyclotrons; Dry etching; Gallium nitride; Polymers; Radio frequency; Resonance; Rough surfaces; Scanning electron microscopy; Surface morphology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microprocesses and Nanotechnology Conference, 2004. Digest of Papers. 2004 International
  • Print_ISBN
    4-99024720-5
  • Type

    conf

  • DOI
    10.1109/IMNC.2004.245651
  • Filename
    1459585
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3455709