• DocumentCode
    3456576
  • Title

    Low noise microwave FETs

  • Author

    Kohan, V.P. ; Ryzhakova, L.K. ; Rengevych, O.E. ; Stovpovoy, M.A.

  • Author_Institution
    OSA Saturn, Kiev, Ukraine
  • fYear
    1999
  • fDate
    13-16 Sept. 1999
  • Firstpage
    64
  • Lastpage
    65
  • Abstract
    The results of design and fabrication of GaAs FETs are presented. These FETs can serve as active elements for hybrid ICs with operating frequencies of 4 and 12 GHz. By cooling the FETs down to 80 K one can substantially improve their microwave parameters.
  • Keywords
    III-V semiconductors; S-parameters; cryogenic electronics; gallium arsenide; microwave field effect transistors; 12 GHz; 4 GHz; 80 K; GaAs; active elements; cooling; cryogenics; hybrid ICs; microwave FETs; microwave parameters; operating frequencies; Additive white noise; Electrodes; Fabrication; Frequency; Gallium arsenide; Gold; Lithography; Microwave FETs; Semiconductor device noise; Temperature sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1999. Microwave & Telecommunication Technology. 1999 9th International Crimean [In Russian with English abstracts]
  • Conference_Location
    Sevastopol, Crimea, Ukraine
  • Print_ISBN
    966-572-003-1
  • Type

    conf

  • DOI
    10.1109/CRMICO.1999.815145
  • Filename
    815145
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3456576