Conditions of achievement of maximum flat drain current and drain voltage waveforms in the microwave F-class power amplifier on GaAs MESFET

Author

Krizhanovsky, V.G. ; Rudiakova, A.N.

Author_Institution

Dept. of Radiophys., Donetsk State Univ., Ukraine

fYear

1999

fDate

13-16 Sept. 1999

Firstpage

91

Lastpage

92

Abstract

Shows that the greatest efficiency of the microwave power amplifier is reached when harmonics with identical numbers do not present a spectra of voltage and current of the active device (bipolar or the field-effect transistor) output simultaneously. It is noted, that the least power dissipation in the transistor can be achieved at the maximum flat current and voltage waveforms at its output. Since current has no odd harmonics and voltage has no even harmonics (or vice-versa), the maximum flat voltage and current are the necessary conditions for achievement of maximum efficiency of the amplifier. The requirements for obtaining the maximum flat current and voltage waveforms imposed on impedances of input and output matching circuits of microwave power amplifier on the GaAs MESFET are given.

Keywords

III-V semiconductors; MESFET integrated circuits; MMIC power amplifiers; gallium arsenide; harmonics; impedance matching; GaAs; MESFET; drain voltage waveforms; harmonics; matching circuits; maximum efficiency; maximum flat drain current; microwave F-class power amplifier; power dissipation; FETs; Impedance matching; Microwave amplifiers; Microwave circuits; Microwave devices; Microwave transistors; Power amplifiers; Power dissipation; Power system harmonics; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 1999. Microwave & Telecommunication Technology. 1999 9th International Crimean [In Russian with English abstracts]

Conference_Location

Sevastopol, Crimea, Ukraine

Print_ISBN

966-572-003-1

Type

conf

DOI

10.1109/CRMICO.1999.815156

Filename

815156