Conditions of achievement of maximum flat drain current and drain voltage waveforms in the microwave F-class power amplifier on GaAs MESFET

Shows that the greatest efficiency of the microwave power amplifier is reached when harmonics with identical numbers do not present a spectra of voltage and current of the active device (bipolar or the field-effect transistor) output simultaneously. It is noted, that the least power dissipation in the transistor can be achieved at the maximum flat current and voltage waveforms at its output. Since current has no odd harmonics and voltage has no even harmonics (or vice-versa), the maximum flat voltage and current are the necessary conditions for achievement of maximum efficiency of the amplifier. The requirements for obtaining the maximum flat current and voltage waveforms imposed on impedances of input and output matching circuits of microwave power amplifier on the GaAs MESFET are given.