A frequency doubler with high conversion gain and good fundamental suppression

Author

Gruson, Frank ; Bergmann, Günther ; Schumacher, Hermann

Author_Institution

Dept. of Electron Devices & Circuits, Ulm Univ., Germany

Volume

1

fYear

2004

fDate

6-11 June 2004

Firstpage

175

Abstract

A frequency doubler architecture with high conversion gain and high suppression of the input frequency is presented. The basic form operates at supply voltages down to 1.2 V and the simple topology allows for broad band operation. The new design was applied to a K_u-band frequency doubler which drives the LO port of a single-balanced Gilbert mixer. Fabricated in an advanced SiGe-HBT technology with f_T = 80 GHz / f_max = 90 GHz, the compact design of LO buffer, LO doubler and mixer measures just 295 μm × 325 μm (excluding pads). A conversion gain of +17 dB at an output frequency of 14 GHz has been achieved for the doubler (including buffers), while the mixer conversion gain is +8.4 dB.

Keywords

MMIC frequency convertors; MMIC mixers; elemental semiconductors; frequency multipliers; heterojunction bipolar transistors; integrated circuit design; silicon compounds; 17 dB; 295 micron; 325 micron; 8.4 dB; 80 GHz; 90 GHz; HBT technology; K_u-band frequency doubler; LO buffer; LO doubler; LO port; MMIC frequency converters; MMIC mixers; SiGe; broad band operation; frequency conversion; frequency synthesizers; fundamental suppression; heterojunction bipolar transistors; mixer conversion gain; single-balanced Gilbert mixer; supply voltage; Circuits; Electron devices; Frequency conversion; Frequency synthesizers; Gain; Impedance matching; MMICs; Mixers; Power harmonic filters; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2004 IEEE MTT-S International

ISSN

0149-645X

Print_ISBN

0-7803-8331-1

Type

conf

DOI

10.1109/MWSYM.2004.1335836

Filename

1335836