Capacitance-voltage profiling of GaAs metal-semiconductor field-effect transistors and geometrical interelectrode capacitance

It is shown that the geometrical interelectrode capacitance of a GaAs metal-semiconductor field-effect transistor (MESFET) must be allowed for when determining the channel doping profile from capacitance-voltage measurements. A simple method of determining this interelectrode capacitance as the constant the measured high-frequency capacitance-voltage characteristic tends to is proposed.