DocumentCode
3458664
Title
Critical issues in plasma etching processes involved in the gate etch fabrication of CMOS devices
Author
Joubert, O. ; Pargon, E. ; Detter, X. ; Cunge, G. ; Vallier, L.
Author_Institution
Lab d´Electron. et de Technol. de l´Inf., CEA, Centre d´Etudes Nucleaires de Grenoble, France
fYear
2003
fDate
24-25 April 2003
Firstpage
12
Lastpage
15
Abstract
Plasma processes involved in the fabrication of advanced CMOS devices become increasingly challenging. The increase in complexity comes from the introduction of new materials as well as the decrease in feature dimension. In this paper, we will briefly point out some of the most critical issues that we are facing nowadays at the front end level of the device fabrication.
Keywords
CMOS integrated circuits; X-ray photoelectron spectra; passivation; photoresists; plasma diagnostics; process control; size control; sputter etching; CD control; CMOS devices; XPS analyses; critical issues; feature dimension; front end level; gate etch fabrication; materials introduction; plasma etching processes; resist trimming; CMOS process; Etching; Fabrication; Plasma applications; Plasma density; Plasma devices; Plasma diagnostics; Plasma materials processing; Plasma stability; Resists;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma- and Process-Induced Damage, 2003 8th International Symposium
Print_ISBN
0-7803-7747-8
Type
conf
DOI
10.1109/PPID.2003.1199719
Filename
1199719
Link To Document