DocumentCode :
3458680
Title :
Development of a CMOS time memory cell VLSI and a CAMAC module with 0.5 ns resolution
Author :
Arai, Y. ; Ikeno, M. ; Matsumura, T.
Author_Institution :
Nat. Lab. for High Energy Phys., KEK, Ibaraki, Japan
fYear :
1991
fDate :
2-9 Nov. 1991
Firstpage :
691
Abstract :
A CMOS time-to-digital converter chip, the time memory cell (TMC), for high-rate wire chamber application has been developed. The chip has a timing resolution of 0.52 ns, dissipates only 7 mW/channel, and contains four channels in a chip. Each channel has 1024 memory locations which act as a buffer 1- mu s deep. The chip was fabricated in a 0.8- mu m CMOS process and is 5.0 mm by 5.6 mm. A CAMAC module with 32 input channels was developed using the TMC chip. This module is designed to operate in both common start and common stop modes. The circuit of the module and test results are described.<>
Keywords :
CAMAC; CMOS integrated circuits; VLSI; nuclear electronics; physics computing; proportional counters; 0.5 ns; CAMAC module; CMOS time memory cell VLSI; common start; common stop modes; high-rate wire chamber application; input channels; memory locations; module; test results; time-to-digital converter chip; timing resolution; CAMAC; CMOS process; CMOS technology; Circuit testing; Clocks; Delay effects; Energy resolution; Laboratories; Timing; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference, 1991., Conference Record of the 1991 IEEE
Conference_Location :
Santa Fe, NM, USA
Print_ISBN :
0-7803-0513-2
Type :
conf
DOI :
10.1109/NSSMIC.1991.259027
Filename :
259027
Link To Document :
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