DocumentCode :
3458767
Title :
A general concept for monitoring plasma induced charging damage
Author :
Smeets, David ; Martin, Andreas ; Scarp, A.
Author_Institution :
Reliability Methodology Monitoring, Infineon Technol. AG, Munich, Germany
fYear :
2003
fDate :
24-25 April 2003
Firstpage :
36
Lastpage :
39
Abstract :
For many years antenna structures have been successfully applied for detection of charging damage from a variety of sources such as plasma etching, ion implantation and plasma enhanced deposition. In this work a guideline for PID monitoring standardization for JEDEC has been given. A systematic hierarchy approach has been presented in order to be able to establish an automatic data evaluation usable for production monitoring. A minimum set of antenna test structures has been addressed, as well as the correct characterization techniques. It has been shown that a diagnostic stress is required, in order to be able to detect signals when PID issues occur. The large amount of data generated by the monitoring measurements is hardly manageable without an automatic procedure. The definition of such procedure depends on the choice of the monitoring parameters, but aims in any case to reduce the measured parameters to a clear and simple figure of the PID that can be easily trended. Finally, the obtained PID figure can be used to establish wafer scarp criteria based on PID.
Keywords :
MOSFET; ion implantation; plasma CVD; process monitoring; semiconductor device metallisation; semiconductor device reliability; sputter etching; surface charging; JEDEC; PID monitoring standardization; antenna test structures; automatic data evaluation; diagnostic stress; ion implantation; nMOS devices; pMOS devices; plasma enhanced deposition; plasma etching; plasma induced charging damage; production monitoring; wafer scarp criteria; Computerized monitoring; Etching; Guidelines; Ion implantation; Plasma applications; Plasma immersion ion implantation; Plasma sources; Production systems; Standardization; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma- and Process-Induced Damage, 2003 8th International Symposium
Print_ISBN :
0-7803-7747-8
Type :
conf
DOI :
10.1109/PPID.2003.1199725
Filename :
1199725
Link To Document :
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