Title :
Impact on film bulk acoustic resonator tempco and quality factor from boron doped SiO2 temperature compensation material
Author :
Zou, Qiong ; Small, Martha ; Lee, Daewoo ; Bi, Frank ; Snyder, R. ; Lamers, T.L. ; Choy, Jennifer ; Ruby, Rich
Author_Institution :
Wireless Semicond. Div., Avago Technol., Inc., Fort Collins, CO, USA
Abstract :
This paper presents a new boron doped SiO2 temperature compensation material and its impact on FBAR TempCo characteristics, coupling coefficient kt2 and Quality factor Q. Compared with regular SiO2 temperature compensation FBAR devices, boron doped SiO2 temperature compensation FBAR devices show much higher positive TempCo effect and higher kt2. Positive TempCo effect can be optimized by adjusting B2H6 gas flow and boron content in boron doped SiO2 film. FTIR Si-O peak has good correlation with FBAR TempCo performance and can be used to characterize and optimize TempCo material.
Keywords :
Fourier transform spectra; Q-factor; acoustic resonators; boron; bulk acoustic wave devices; compensation; infrared spectra; silicon compounds; thermal expansion; thin film devices; FBAR TempCo characteristics; FTIR; SiO2:B; coupling coefficient; film bulk acoustic resonator tempCo; quality factor; temperature compensation material; Boron; Film bulk acoustic resonators; Films; Fluid flow; Q-factor; Temperature; Boron doped SiO2; Film Bulk Acoustic Resonator (FBAR); temperature coefficient of frequency (TCF); temperature compensation (TempCo);
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII), 2013 Transducers & Eurosensors XXVII: The 17th International Conference on
Conference_Location :
Barcelona
DOI :
10.1109/Transducers.2013.6627037
