DocumentCode
3459745
Title
New IGBT modules for advanced neutral-point-clamped 3-level power converters
Author
Komatsu, K. ; Yatsu, M. ; Miyashita, S. ; Okita, S. ; Nakazawa, H. ; Igarashi, S. ; Takahashi, Y. ; Okuma, Y. ; Seki, Y. ; Fujihira, T.
Author_Institution
Fuji Electr. Syst. Co. Ltd., Matsumoto, Japan
fYear
2010
fDate
21-24 June 2010
Firstpage
523
Lastpage
527
Abstract
New IGBT modules to realize advanced neutral-point-clamped (A-NPC) 3-level power converters have been developed for the first time. The power loss of the IGBT modules developed is minimized by using 6th generation IGBT and FWD and 2nd generation RB-IGBT dies, the stray inductance between each pair of main terminal is as low as 40nH, and the arrangement of the terminals are optimized for constructing small sized A-NPC 3-level power converters. The electrical properties of the IGBT modules developed are reported. The power conversion efficiencies and power losses of A-NPC 3-level inverters using IGBT modules developed are calculated and compared with those of NPC 3-level and normal 2-level inverters. Prototypes of UPS using A-NPC circuit and IGBT modules developed have been fabricated and tested. The power conversion efficiency of the prototype UPS of usually operating type exceeds 95%, which is higher than that of conventional products by more than 5 point.
Keywords
insulated gate bipolar transistors; power convertors; power semiconductor devices; 2G RB-IGBT dies; FWD; UPS; advanced neutral-point-clamped 3-level power converters; insulated gate bipolar transistors; Clamps; Diodes; Filters; Insulated gate bipolar transistors; Inverters; Power conversion; Switches; Switching converters; Switching loss; Voltage; IGBT Module; Neutral-Point-Clamped; Power Converter; Three-Level;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Conference (IPEC), 2010 International
Conference_Location
Sapporo
Print_ISBN
978-1-4244-5394-8
Type
conf
DOI
10.1109/IPEC.2010.5543275
Filename
5543275
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