DocumentCode :
3459846
Title :
High power density, low stray inductance, double sided cooled matrix-converter type switch
Author :
Castellazzi, A. ; Solomon, A. ; Agyakwa, P. ; Li, J. ; Trentin, A. ; Johnson, C.M.
Author_Institution :
Power Electron. Machines & Control Group, Univ. of Nottingham, Nottingham, UK
fYear :
2010
fDate :
21-24 June 2010
Firstpage :
528
Lastpage :
533
Abstract :
This paper presents an advanced integration approach for vertical power semiconductor devices. Based on recently demonstrated surface bump technology, it advances previous work by implementing a flip-chip stacking concept, which results in an improved solution for space exploitation, device performance optimization and assembly process simplification. As a case study, the design of a high-voltage bidirectional switch is considered, for which a prototypal assembly is developed and preliminary functional tests are carried out.
Keywords :
flip-chip devices; matrix convertors; power semiconductor switches; switching convertors; double sided cooled matrix-converter type switch; flip-chip stacking; high power density; high-voltage bidirectional switch; stray inductance; surface bump technology; vertical power semiconductor device; Inductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics Conference (IPEC), 2010 International
Conference_Location :
Sapporo
Print_ISBN :
978-1-4244-5394-8
Type :
conf
DOI :
10.1109/IPEC.2010.5543282
Filename :
5543282
Link To Document :
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