New screening concept for deep submicron CMOS VLSIs using temperature characteristics of leakage currents in MOS devices

Author

Shimaya, Masakazu

Author_Institution

NTT Syst. Electron. Lab., Kanagawa, Japan

fYear

1997

fDate

8-10 Apr 1997

Firstpage

49

Lastpage

56

Abstract

Temperature dependencies of several kinds of leakage current in MOSFETs were precisely investigated. We proposed the new concept of low-temperature standby-current (LTSC) screening for discriminating highly reliable CMOS LSIs based on the different temperature dependence between the normal and abnormal leakage current. This technique has a sufficient threshold current margin for the pass/fail decision making and is effective for screening deep-submicron CMOS LSIs with low threshold voltage MOSFETs

Keywords

CMOS integrated circuits; MOSFET; VLSI; integrated circuit reliability; leakage currents; MOSFETs; abnormal leakage current; deep submicron CMOS VLSI; highly reliable CMOS LSI discrimination; leakage currents; low threshold voltage MOSFETs; low-temperature standby-current screening; pass/fail decision making; screening concept; temperature characteristics; temperature dependence; Current supplies; Decision making; Large scale integration; Leakage current; MOSFETs; Power supplies; Subthreshold current; Temperature dependence; Threshold voltage; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 1997. 35th Annual Proceedings., IEEE International

Conference_Location

Denver, CO

Print_ISBN

0-7803-3575-9

Type

conf

DOI

10.1109/RELPHY.1997.584234

Filename

584234