DocumentCode
3460118
Title
Large-signal state-space model for Ge-based MHEMTs: construction and validation by an amplifier in multilayer thin-film technology
Author
Vandersmissen, R. ; Schreurs, Dominique ; Carchon, G. ; Borghs, G.
Author_Institution
Div. MCP, IMEC, Leuven, Belgium
fYear
2003
fDate
4-5 Dec. 2003
Firstpage
283
Lastpage
289
Abstract
We construct a large-signal state-space model for thin-film metamorphic HEMTs based on germanium, directly from time-domain large-signal measurements. These thin-film HEMTs are used in a feedback amplifier circuit, designed as a multichip module with deposited thin layers (MCM-D) on glass. For the first time, we show that this type of state-space model can accurately predict the large-signal behaviour of a feedback amplifier.
Keywords
elemental semiconductors; feedback amplifiers; germanium; high electron mobility transistors; multichip modules; state-space methods; thin film devices; MHEMT; feedback amplifier circuit; glass; large-signal state-space model; metamorphic HEMT; multichip module; multilayer thin film technology; time-domain large-signal measurement; Feedback amplifiers; Germanium; HEMTs; MODFETs; Nonhomogeneous media; Sputtering; Thin film circuits; Time domain analysis; Transistors; mHEMTs;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Measurements Conference, 2003. Fall 2003. 62nd ARFTG
Print_ISBN
0-7803-8195-5
Type
conf
DOI
10.1109/ARFTGF.2003.1459791
Filename
1459791
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