DocumentCode :
3460377
Title :
Stress-induced failure modes in high-tuning range RF MEMS varactors
Author :
Chokshi, Trushal ; Peroulis, Dimitrios
Author_Institution :
Sch. of Electr. & Comput. Eng. & Birck Nanotechnology Center, Purdue Univ., West Lafayette, IN, USA
Volume :
3
fYear :
2005
fDate :
4-6 Oct. 2005
Abstract :
In this paper we focus on electromechanical modeling of high-tuning range MEMS varactors with a focus on failures caused by residual compressive stress. In particular, we quantitatively evaluate for the first time a high-tuning range parallel-plate MEMS varactor in the presence of residual compressive stress. A 3D model generated in ANSYS agrees very favorably with the measured data and explains non-ideal discontinuities in the varactor´s C-V curve. It is interesting to note that, although the failures considered in this paper are not encountered in RF MEMS switches, they become particularly important in analog MEMS varactors since they directly impact their effective tuning range.
Keywords :
fault tolerance; micromechanical devices; semiconductor device models; stress effects; varactors; ANSYS model; electromechanical modeling; high-tuning range RF MEMS varactors; high-tuning range parallel-plate MEMS varactor; residual compressive stress; stress-induced failure mode; Capacitors; Compressive stress; Dielectrics; Film bulk acoustic resonators; Micromechanical devices; Microswitches; Packaging; Radiofrequency microelectromechanical systems; Switches; Varactors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2005 European
Print_ISBN :
2-9600551-2-8
Type :
conf
DOI :
10.1109/EUMC.2005.1610226
Filename :
1610226
Link To Document :
بازگشت